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LiNbO3 Crystal

LiNbO3 Q-switch elements

LiNbO₃ is widely used as electro-optic modulators and Q-switches for Nd:YAG, Nd:YLF and Ti:Sapphire lasers as well as modulators for fiber optics. The following table list the specifications of a typical LiNbO₃ crystal used as Q-switch with transverse E-O modulation. The light propagates in z-axis and electric field applies to x-axis. The electro-optic coefficients of LiNbO₃ are: r33 = 32 pm/V, r₃₁ = 10 pm/V, r₂₂ = 6.8 pm/V at low frequency and r₃₃ = 31 pm/V, r₃₁= 8.6 pm/V, r₂₂ = 3.4 pm/V at high electric frequency. The half–wave voltage: V_π=λd/(2n_o³r₂₂L), r _c=(n_e/n_o)³r₃₃-r₁₃.

LiNbO₃ Q-Switch Specifications

Size

9 X 9 X 25 mm3 or 10 X 10 X 20 mm3 or 4 X 4 X 15 mm3

Other size is available upon request

Tolerance of size

Z-axis: ± 0.2 mm

X-axis and Y-axis:±0.1 mm

Chamfer

less than 0.5 mm at 45°

Accuracy of orientation

Z-axis: <± 5’

X-axis and Y-axis: < ± 10’

Parallelism

< 20"

Finish

10/5 scratch/dig

Flatness

λ/8 at 633 nm

AR-coating

R < 0.2% @ 1064 nm

Electrodes

Gold/Chrome plated on X-faces

Wavefront distortion

<λ/4 @ 633 nm

Extinction ratio

> 400:1 @ 633 nm, φ6 mm beam

LiNbO₃ is also a good acousto-optic crystal and used for surface acoustic wave (SAW) wafer and A-O modulators. We provides acoustic (SAW) grade LiNbO₃ crystals in wafers, as-cut boules, finished components and custom fabricated elements.

Typical Specifications

Diameter

100.0±0.5 mm, 76.2±0.5 mm

Thickness

0.50±0.05 mm, 1.0±0.05, 0.79±0.01,

0.71±0.01 mm, 0.66±0.1

Bending degrees

≤10 μm

Taper

≤20 μm

Axially accuracy

±0.20

Base margin

and direction

Datum

≤±0.02

The length of the base

(a) 22±2 mm

(b) 32±2 mm

The length of two benchmarks

(a) 10±3 mm

(b) 12±3 mm

Surface finishing quality

Chip surface

Both sides polished 10/5

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