Laser Crystals ---------Nd:GdVO4
Neodymium doped Gadolinium Vanadate (Nd:GdVO4) is a promising material for diode pumped
laser. Similar to Nd:YVO4 crystal, Nd:GdVO4 crystal also exhibits high gain, low threshold, and
high absorption coefficients at pumping wavelengths, which result from the excellent fit of
the neodymium dopant in the crystal lattice. Nd:GdVO4 has the additional advantage over
Nd:YVO4 of a much higher thermal conductivity.
DeLn Optics general Nd:GdVO4 production capabilities include.
| Nd dopant concentration |
0.2---3.0 atm% |
| Dopant tolerance |
within 10% of concentration. |
| Diameter |
0.02 ~ 20mm |
| Length |
0.02 ~ 20mm |
| Orientation: |
a-cut crystalline direction(+/-0.20) |
| Dimensional tolerance: |
+/-0.1mm(typical)High precision +/-0.005mm can be available upon request. |
| Wavefront Distortion: |
<l/10 at 632.8nm |
| Surface quality: |
better than 20/10 Scratch/Dig per MIL-O-1380A |
| Parallelism: |
< 10 arc seconds |
| Perpendicularity: |
< 5 arc minutes |
| Surface flatness: |
<l/8 at 632.8nm |
| Clear aperture: |
Central 95% |
| Chamfer: |
0.15x450 |
| Damage threshold: |
over 15J/cm2 (rods without coating) over 700 MW/cm2 (coating) |
| Coating: |
AR@1063nm, R< 0.1% & HT@808nm, T>95% |
| HR@1063nm, R>99.8% & HT@808nm, T>95% |
| HR@1063nm, R>99.8%, HR@532 nm, R>99% & HT@808 nm, T>95% |
| AR@1063 nm, R<0.1% |
| Crystal Structure |
Zircon Tetragonal, space group D4h, a=b=7.21, c=6.35 |
| Melting Point |
1780°C |
| Density |
5.47g/cm 3 |
| Mohs Hardness |
Glass-like, ~ 5 |
| Thermal Expansion Coefficient |
aa=1.5x10 -6 /K, ac=7.3x10 -6 /K |
| Thermal Conductivity Coefficient |
11.7 W/m/K <110> |
| Peak Absorption Wavelength |
808.5 nm |
| Lasing Wavelength |
912.6 nm, 1063.1 nm, 1341.3 nm |
| Crystal Class |
Positive uniaxial, no=na=nb ne=ncno=1.9854, ne=2.1981,@ 1064nmno=2.0382, ne=2.2929, @ 532nmno=1.9977, ne=2.2198, @ 808nm |
| Thermal Optical Coefficient |
dn/dT=4.7x10-6/K |
| Stimulated Emission Cross-Section |
7.60x10-19cm2 , @1064 nm |
| Fluorescent LifetimeNd=1.2 atm% |
95 ms @ 808 nm |
| Loss Coefficient |
0.003 cm-1@ 1064 nm |
| Absorption CoefficienceNd=1.2 atm% |
74 cm-1 @ 808 nm |
| Absorption LengthNd=1.2 atm% |
0.18 mm @ 808 nm |
| Intrinsic LossNd=1.2 atm% |
Less 0.1% cm-1 , @1064 nm |
| Line width |
0.6 nm |
| Polarized Laser Emission |
p parallel to optic axis (c-axis) |
| Diode Pumped Optical to Optical Efficiency |
> 60% |
| Sellmeier Equation (for pure GdVO4 crystals) |
ne2=4.734369 + 0.1216149/(l2 - 0.0523664) - 0.013927l2 no2=3.8987165+0.05990622/(l2 - 0.0514395) - 0.011319l2 |
ORDER |
