Laser Crystals ---------Nd:YVO4
Yttrium vanadate has been growing in popularity because of its high gain, low threshold, and
high absorption coefficients at pumping wavelengths, which result from the excellent fit of
the neodymium dopant in the crystal lattice. These advantages make Nd:YVO4 is a better
choice than Nd:YAG for low-power devices such as hand-held pointers, and others compact
lasers.
DeLn Optics general Nd:YVO4 production capabilities include:
| Nd dopant concentration: |
0.1~3 atm% Tolerance within 10% of concentration |
| Width*Height: |
1*1~ 16*16mm |
| Length: |
0.02 ~ 20mm |
| Orientation: |
a-cut crystalline direction(+/-0.20) |
| Dimensional tolerance: |
(typical); +/-0.005mm can be available upon request. |
| Wavefront Distortion: |
<l/8 at 632.8nm |
| Surface quality: |
better than 20/10 Scratch/Dig per MIL-O-1380A |
| Parallelism: |
< 10 arc seconds |
| Perpendicularity: |
< 5 arc minutes |
| Surface flatness: |
<l/10 at 632.8nm |
| Clear aperture: |
Central 95% |
| Chamfer: |
0.15x450 |
| Damage threshold: |
over 15J/cm2 (rods without coating) over 700 MW/cm2 (coating) |
| Coating: |
AR@1063nm, R< 0.1% & HT@808nm, T>95% |
| HR@1063nm, R>99.8% & HT@808nm, T>95% |
| HR@1063nm, R>99.8%, HR@532 nm, R>99% & HT@808 nm, T>95% |
| AR@1063 nm, R<0.1% |
| Atomic Density |
~1.37*1020 atoms/cm2 |
| Crystal Structure |
Zircon Tetragonal. space group D4h, a=b=7.12, c=6.29 |
| Density |
4.22 g/cm2 |
| Mohs Hardness |
Glass-like, ~5 |
| Thermal Expansion Coefficient |
aa=4.43*10-6 /K, aa=11.37*10-6/K |
| Thermal Conductivity Coefficient |
IIC:5.23 W/m/K; ┷ C: W/m/K |
| Peak Absorption Wavelength |
808.5 nm |
| Lasing Wavelength |
912.6 nm, 1063.1 nm, 1341.3 nm |
| Crystal Class |
Positive uniaxial, no=na=nb ne=ncno=1.9854, ne=2.1981,@ 1064nmno=2.0382, ne=2.2929, @ 532nmno=1.9977, ne=2.2198, @ 808nm |
| Thermal Optical Coefficient |
dn/dT=4.7x10-6/K |
| Stimulated Emission Cross-Section |
7.60x10-19cm2 , @1064 nm |
| Fluorescent LifetimeNd=1.2 atm% |
95 ms @ 808 nm |
| Loss Coefficient |
0.003 cm-1@ 1064 nm |
| Absorption CoefficienceNd=1.2 atm% |
74 cm-1 @ 808 nm |
| Absorption LengthNd=1.2 atm% |
0.18 mm @ 808 nm |
| Intrinsic LossNd=1.2 atm% |
Less 0.1% cm-1 , @1064 nm |
| Line width |
0.6 nm |
| Polarized Laser Emission |
p parallel to optic axis (c-axis) |
| Diode Pumped Optical to Optical Efficiency |
> 60% |
| Sellmeier Equation (for pure GdVO4 crystals) |
ne2=4.734369 + 0.1216149/(l2 - 0.0523664) - 0.013927l2 no2=3.8987165+0.05990622/(l2 - 0.0514395) - 0.011319l2 |
|
Part |
Size |
Nd |
Coatings |
|
(mm) |
S1 |
S2 |
|
NYV001 |
3x3x1 |
0.50% |
AR@1064nm, HT@808nm |
AR@1064nm, |
|
NYV002 |
3x3x1 |
1% |
AR@1064nm, HT@808nm |
AR@1064nm, |
|
NYV003 |
3x3x1 |
1% |
HR@1064nm, HT@808nm, |
AR@1064nm, |
|
NYV004 |
3x3x1 |
1% |
HR@1064nm,HT@808nm, HR@532nm |
AR@1064nm, |
|
NYV005 |
3x3x3 |
0.50% |
AR@1064nm, HT@808nm |
AR@1064nm, HT@808nm |
|
NYV006 |
3x3x3 |
0.50% |
HR@1064nm, HT@808nm |
AR@1064nm, HT@808nm |
|
NYV007 |
3x3x5 |
0.50% |
AR@1064nm, HT@808nm |
AR@1064nm, HT@808nm |
|
NYV008 |
3x3x8 |
0.50% |
AR@1064nm, HT@808nm |
AR@1064nm, HT@808nm |
|
NYV009 |
3x3x12 |
0.50% |
AR@1064nm, HT@808nm |
AR@1064nm, HT@808nm |
|
NYV010 |
3x3x3 |
1.00% |
AR@1064nm, HT@808nm |
AR@1064nm, HT@808nm |
|
NYV011 |
3x3x3 |
1.00% |
HR@1064nm, HT@808nm |
AR@1064nm, HT@808nm |
|
NYV101 |
3x3x0.5 |
3.00% |
HR@1064nm, HR@532nm, HT@808nm |
AR@1064nm&532 nm |
|
NYV102 |
3x3x1 |
1.00% |
HR@1064nm, HR@532nm, HT@808nm |
AR@1064nm&532 nm |
|
NYV103 |
3x3x1 |
2.00% |
HR@1064nm, HR@532nm, HT@808nm |
AR@1064nm&532 nm |
|
NYV104 |
3x3x3 |
1.00% |
HR@1064nm, HR@532nm, HT@808nm |
AR@1064nm&532 nm |
|
NYV105 |
3x3x5 |
0.50% |
HR@1064nm, HR@532nm, HT@808nm |
AR@1064nm&532 nm |
|
NYV106 |
3x3x2 |
1.00% |
HR@1064nm, HR@532nm, HT@808nm |
AR@1064nm&532 nm |
|
NYV107 |
3x3x2 |
0.50% |
HR@1064nm, HR@532nm, HT@808nm |
AR@1064nm&532 nm |
ORDER |
